METHOD FOR FORMING OXIDE LAYER IN SHALLOW TRENCH ISOLATION PROCESS OF SEMICONDUCTOR

摘要

PURPOSE: A method for forming an oxide layer in a shallow trench isolation process of a semiconductor is provided to prevent formation of a salicide layer as a sidewall of a trench by transforming a part of an oxide layer to an oxynitride layer. CONSTITUTION: An oxide layer is grown or deposited on a surface of a shallow trench isolation layer(202). The oxide layer is partially transformed to an oxynitride layer(200) by using an annealing gas or one of NO gas, N2O gas, and NH3 gas. The oxynitride layer(200) is used for preventing formation of a salicide layer(204) on a sidewall of the shallow trench isolation layer(202). The process temperature for forming the oxynitride layer(200) is 700 to 1150 degrees centigrade.