发明名称 SPUTTERING TARGET BASED ON TITANIUM DIOXIDE
摘要 PROBLEM TO BE SOLVED: To manufacture a sputtering target consisting of titanium dioxide, which is suitable for direct current voltage sputtering, that is, has an electrical resistivity of less than 5 Ωcm, (preferably, less than 1 Ωcm), and which can be manufactured by a particularly inexpensive method to be simply operated with an easy handling technique, so as to be produced with a large number of fragmentations. SOLUTION: The method for manufacturing the electrically conductive titanium dioxide (TiO2 ) sputtering target with an electrical resistivity of less than 5 Ωcm, comprises mixing starting materials consisting of titanium dioxide with a doping agent or a mixture of doping agents, cold compacting it, and subsequently sintering it.
申请公布号 JP2003073820(A) 申请公布日期 2003.03.12
申请号 JP20020236064 申请日期 2002.08.13
申请人 WC HERAEUS GMBH 发明人 SCHULTHEIS MARKUS;SIMONS CHRISTOPH DR;WEIGERT MARTIN DR
分类号 C04B35/46;B01J35/02;B01J37/02;C23C14/34 主分类号 C04B35/46
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