| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a sintered compact for forming a laminated film for semiconductor memory a and easily obtained an aimed high densified composition by suppressing dispersion of composing element, decomposition, and development of metal phase caused by a reductive reaction. SOLUTION: In the method of manufacturing the sintered compact, the raw material powder comprises of >=one kinds of powder containing at least one element selected from among a group of Ru, Ir, Pt, Ca, Ba, Sr, Bi, Pb, La, Ti, Ta, and Zr. The compact is manufactured by following processes: (a) a process for calcinations in the presence of oxygen after preparation of the raw material powder; (b) a grinding process for the synthetic powder obtained from calcinations; (c) the ground powder is put into a punch and dies having a predetermined shape provided between a pair of electrodes of positive or negative, and pressed under nonexistence of oxygen; and (d) a process for sintering at the temperature of >=800 deg.C by electric current conduction and discharging between the compressed synthetic powder grains. |
