ZnOSSe compound semiconductor, integrated circuit using the semiconductor and method of manufacturing the semiconductor and the integrated circuit

摘要

A light-emitting device includes a silicon substrate (1), a ZnOSSe layer (2) provided on the silicon substrate that is lattice-matched to the silicon substrate, and a separate confinement heterostructure light-emitting layer that is provided on the ZnOSSe layer and includes an active layer (4) and upper and lower clad layers (5, 3).