Monolithically integrated semiconductor device

摘要

The component has a first charge carrier region with a first doping containing at least two structured second regions of opposite doping containing third structured regions of the first doping and a short circuit across the PN junction between the second and third regions. The first region has a further contact connected to a higher concentration region close to the surface so that Ohmic contact exists and is connected to a Schottky diode(s). The component has a first charge carrier region (12) with a first charge carrier doping containing at least two separate structured second regions (14) of opposite doping containing third structured regions (16) of the first doping and a short circuit (20) across the PN junction between the second and third regions (source connection). The first region is connected to the drain connection (18). The second regions can be inverted and at least one Schottky diode (30) is connected in parallel with the first and third regions. The first region has a further contact (28) connected to a higher concentration charge carrier region (32) close to the surface so that Ohmic contact exists and is connected to the Schottky diode(s).