发明名称 CHEMICAL MECHANICAL POLISHING APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a chemical and mechanical polishing apparatus wherein a polishing head to which gas pressure of plural systems is applied may be easily replaced regardless of its type. SOLUTION: The chemical and mechanical polishing CMP apparatus 10 comprises a head pedestal 24 on which any one of plural polishing heads 26A, 26B is removably mounted and which has gas lines 110-116 each communicating with gas ports of the polishing heads when one polishing head, out of the polishing heads, having the maximum number of gas ports is mounted, the same number of gas pressure control systems 120-126 as that of the gas lines of the head pedestal, and a change-over means 128 for switching connection between the gas pressure control systems and the gas lines of the head pedestal. This structure does not need operation of reconnection of piping when replacing polishing heads.
申请公布号 JP2003071705(A) 申请公布日期 2003.03.12
申请号 JP20010256762 申请日期 2001.08.27
申请人 APPLIED MATERIALS INC 发明人 YASUHARA HAJIME
分类号 B24B37/04;B24B37/30;H01L21/304 主分类号 B24B37/04
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