| 摘要 |
PROBLEM TO BE SOLVED: To provide a polishing pad adjusting tool efficiently adjusting a polishing pad without excessively reducing a service life of the polishing pad in CMP of semiconductor wafer. SOLUTION: An adjusting surface 28 of the polishing pad adjusting tool 26 is provided with a first adjusting area 32a having small average numbers of abrasive grain 30 per unit area and a second adjusting area 32b having larger average numbers of abrasive grain 30 per unit area than the first adjusting area 32a. Since the polishing pad 14 is cut with the first adjusting area 32a having relatively small average numbers of abrasive grain 30 per unit area and the surface of the cut polishing pad 14 is adjusted with the second adjusting area 32b having relatively large average numbers of abrasive grain 30 per unit section, the polishing pad 14 can be adjusted without excessively reducing life of the polishing pad 14. Polishing speed of wafer 20 can be stabilized at high speed in CMP to prevent scratch or defect of the wafer 20. |
