Process for producing a light-emitting and/or a light-receiving semiconductor body

摘要

A light-emitting and/or light-receiving semiconductor body is produced with one or more semiconductor layers composed of GaAsxP1-x, where 0<=x<1. At least a portion of the surface of the semiconductor layer is first treated with an etching solution H2SO4:H2O2:H2O in a first etching step and then with hydrofluoric acid in a second etching step. The etching results in a surface roughness on the treated portion of the surface of the semiconductor layer.