| 发明名称 |
Method for etching organic film, method for fabricating semiconductor device and pattern formation method |
| 摘要 |
An organic film is etched by using plasma generated from an etching gas containing a first gas including a straight chain saturated hydrocarbon and a second gas including a nitrogen component.
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| 申请公布号 |
US6531402(B2) |
申请公布日期 |
2003.03.11 |
| 申请号 |
US20010798912 |
申请日期 |
2001.03.06 |
| 申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
NAKAGAWA HIDEO |
| 分类号 |
G03F7/40;H01L21/302;H01L21/3065;H01L21/311;H01L21/3213;H01L21/768;H01L23/522;(IPC1-7):H01L21/302;H01L21/461 |
主分类号 |
G03F7/40 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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