发明名称 |
Method for the formation of semiconductor layer |
摘要 |
A method for the formation of a semiconductor layer by which a defect density of structural defects, particularly a dislocation density of threading dislocations in the resulting semiconductor layer can be remarkably reduced, so that hours of work can be shortened as well as a manufacturing cost can be reduced without requiring any complicated process comprises supplying a structural defect suppressing material for suppressing structural defects in the semiconductor layer onto a surface of the layer of a material from which the semiconductor layer is to be formed.
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申请公布号 |
US6530991(B2) |
申请公布日期 |
2003.03.11 |
申请号 |
US20000734651 |
申请日期 |
2000.12.13 |
申请人 |
RIKEN;TANAKA SATORU |
发明人 |
TANAKA SATORU;TAKEUCHI MISAICHI;AOYAGI YOSHINOBU |
分类号 |
C30B25/02;H01L21/20;H01L21/203;H01L21/205;H01L33/12;H01L33/16;H01L33/32;H01L33/34;H01S5/323;H01S5/343;(IPC1-7):C30B25/02;C30B29/38 |
主分类号 |
C30B25/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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