发明名称 |
Borderless gate structures |
摘要 |
A method for forming a gate conductor cap in a transistor comprises the steps of: a) forming a polysilicon gate conductor; b) doping the polysilicon gate; c) doping diffusion areas; and d) capping the gate conductor by a nitridation method chosen from among selective nitride deposition and selective surface nitridation. The resulting transistor may comprise a capped gate conductor and borderless diffusion contacts, wherein the capping occurred by a nitridation method chosen from among selective nitride deposition and selective surface nitridation and wherein a portion of the gate conductor is masked during the nitridation method to leave open a contact area for a local interconnect or a gate contact.
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申请公布号 |
US6531724(B1) |
申请公布日期 |
2003.03.11 |
申请号 |
US20000686740 |
申请日期 |
2000.10.10 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
FURUKAWA TOSHIHARU;HAKEY MARK C.;HOLMES STEVEN J.;HORAK DAVID V.;RABIDOUX PAUL A. |
分类号 |
H01L21/60;H01L21/768;(IPC1-7):H01L29/772 |
主分类号 |
H01L21/60 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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