| 发明名称 |
Semiconductor device and method for fabricating the same |
| 摘要 |
A semiconductor device of the present invention includes an electrode, which is formed over a substrate and contains ruthenium. Crystal grains of ruthenium in the electrode have stepped surfaces.
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| 申请公布号 |
US6531729(B2) |
申请公布日期 |
2003.03.11 |
| 申请号 |
US20010855773 |
申请日期 |
2001.05.16 |
| 申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
TSUZUMITANI AKIHIKO;OKUNO YASUTOSHI;MORI YOSHIHIRO |
| 分类号 |
H01L21/02;H01L21/8242;(IPC1-7):H01L29/76;H01L27/108;H01G4/005;H01G4/008 |
主分类号 |
H01L21/02 |
| 代理机构 |
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