Lanthanum oxide-based gate dielectrics for integrated circuit field effect transistors

摘要

Lanthanum oxide-based gate dielectrics are provided for integrated circuit field effect transistors. The gate dielectrics may include lanthanum oxide, preferably amorphous lanthanum oxide and/or an alloy of lanthanum oxide and silicon oxide, such as lanthanum silicate (La2SiO5). Lanthanum oxide-based gate dielectrics may be fabricated by evaporating lanthanum on a silicon surface of an integrated circuit substrate. The lanthanum may be evaporated in the presence of oxygen. Lanthanum and silicon may be co-evaporated. An anneal then may be performed. Lanthanum oxide-based dielectrics also may be used for integrated circuit capacitors.