发明名称 |
Method of making a semiconductor device with a low permittivity region |
摘要 |
A method of making a semiconductor device (10) having a low permittivity region (24) includes forming a first layer (30/42) over a surface of a trench (20), and etching through an opening (70) in the first layer that is smaller than a width (W2) of the trench to remove a first material (38) from the trench. A second material (44) is deposited to plug the opening to seal an air pocket (40) in the trench. The low permittivity region features air pockets with a high volume because the small size of the opening allows the second material to plug the trench without accumulating significantly in the trench.
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申请公布号 |
US6531376(B1) |
申请公布日期 |
2003.03.11 |
申请号 |
US20020123657 |
申请日期 |
2002.04.17 |
申请人 |
SEMICONDUCTOR COMPONENTS INDUSTRIES LLC |
发明人 |
CAI WEIZHONG;SUDHAMA CHANDRASEKHARA;WU YUJING;KAMEKONA KEITH |
分类号 |
H01L21/762;H01L21/764;(IPC1-7):H01L21/76 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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