| 摘要 |
A field effect transistor includes a lower gate electrode, upper gate electrode, first, second, and third barrier films, and source and drain. The lower gate electrode is formed from silicon on a silicon substrate via a gate insulating film. The upper gate electrode is formed from copper above the lower gate electrode. The first barrier film has a conductivity capable of supplying to the lower gate electrode a current enough to drive a channel portion, covers the lower surface of the upper gate electrode, and impedes diffusion of copper. The second barrier film has a lower end in contact with the first barrier film, covers the side surfaces of the upper gate electrode, and impedes diffusion of copper. The third barrier film has an end portion in contact with the second barrier film, covers the upper surface of the upper gate electrode, and impedes diffusion of copper. The source and drain are formed in the silicon substrate to sandwich a region under the lower gate electrode. A method of manufacturing the transistor is also disclosed.
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