发明名称 |
Non-metallic barrier formations for copper damascene type interconnects |
摘要 |
A method for forming dual-damascene type conducting interconnects with non-metallic barriers that protect said interconnects from fluorine out-diffusion from surrounding low-k, fluorinated dielectric materials. One embodiment of the method is particularly suited for forming such interconnects in microelectronics fabrications of the sub 0.15 micron generation.
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申请公布号 |
US6531390(B2) |
申请公布日期 |
2003.03.11 |
申请号 |
US20010925819 |
申请日期 |
2001.08.10 |
申请人 |
CHARTERED SEMICONDUCTOR MANUFACTURING LTD. |
发明人 |
CHOOI SIMON;GUPTA SUBHASH;ZHOU MEI-SHENG;HONG SANGKI |
分类号 |
H01L21/768;(IPC1-7):H01L21/822 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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