发明名称 Large area plasma source
摘要 A chamber housing (2) enclosing a plasma region (20) in a large area plasma source used for performing plasma assisted processes in large area substrates, the chamber housing (2) being composed of: a housing member (2) constituting a substantially vertically extending wall (4) surrounding a space (6) corresponding to the plasma region (10), the housing member (2) having a plurality of openings (32) and electrically conducive elements forming an electrostatic shield around the space; a plurality of dielectric members (36) each having a peripheral edge and each disposed to close a respective opening (23); and sealing members (40, 40', 42, 42') forming a hermetic seal between said housing member and said peripheral edge of each of said dielectric members (36).
申请公布号 US6530342(B1) 申请公布日期 2003.03.11
申请号 US20010869245 申请日期 2001.06.27
申请人 TOKYO ELECTRON LIMITED 发明人 JOHNSON WAYNE L.
分类号 H05H1/46;B01J19/08;C23C16/00;C23C16/507;H01J37/32;H01L21/205;H01L21/26;H01L21/302;H01L21/306;H01L21/3065;H01L21/42;H05H1/00;(IPC1-7):H05H1/00 主分类号 H05H1/46
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