发明名称 |
Fabrication method for a memory device |
摘要 |
A fabrication method for a memory device is described. The method includes sequentially forming a pad oxide layer and a mask layer on a substrate, wherein the mask layer exposes a portion of the pad oxide layer. Thereafter, an ion implantation process is conducted to form a buried bit line in the substrate that is not covered by the mask layer. A raised bit line is then formed on the pad oxide layer above the buried bit line. The mask layer and the pad oxide layer are then removed, followed by forming a conformal gate oxide layer on the surface of the substrate and the raised bit line. A word line is further formed on the gate oxide layer. |
申请公布号 |
US6531361(B1) |
申请公布日期 |
2003.03.11 |
申请号 |
US20020142720 |
申请日期 |
2002.05.08 |
申请人 |
MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
LIU MU-YI;CHAN KWANG-YANG;YEH YEN-HUNG;FAN TSO-HUNG;LU TAO-CHENG |
分类号 |
H01L21/8239;H01L27/105;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/8239 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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