发明名称 Anode for plating a semiconductor wafer
摘要 An anode for use in electroplating semiconductor wafers, comprising a metal plate formed from a generally continuous casting process that is essentially free of voids or cracks, the casting being thermo-mechanically worked until the anode has an average grain size of less than 100 mum.
申请公布号 US6531039(B2) 申请公布日期 2003.03.11
申请号 US20010790078 申请日期 2001.02.21
申请人 NIKKO MATERIALS USA, INC. 发明人 KOHUT STEPHEN J.
分类号 C25D17/10;(IPC1-7):C25B11/04 主分类号 C25D17/10
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