发明名称 |
Anode for plating a semiconductor wafer |
摘要 |
An anode for use in electroplating semiconductor wafers, comprising a metal plate formed from a generally continuous casting process that is essentially free of voids or cracks, the casting being thermo-mechanically worked until the anode has an average grain size of less than 100 mum.
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申请公布号 |
US6531039(B2) |
申请公布日期 |
2003.03.11 |
申请号 |
US20010790078 |
申请日期 |
2001.02.21 |
申请人 |
NIKKO MATERIALS USA, INC. |
发明人 |
KOHUT STEPHEN J. |
分类号 |
C25D17/10;(IPC1-7):C25B11/04 |
主分类号 |
C25D17/10 |
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地址 |
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