| 摘要 |
The present invention discloses a structure of a flash memory cell having a horizontal surrounding gate (HSG) and a method for manufacturing the same. The flash memory cell of the present invention is formed on a trench of an isolation region, and a channel of the flash memory cell composed of a semiconductor film is encompassed and surrounded by a tunneling oxide layer, a floating gate, a dielectric layer, and a control gate in sequence. In addition, the floating gate and the control gate are also formed on the trench below the channel. Therefore, the leakage current of the channel can be reduced, and the short channel effect can be avoided. Furthermore, the coupling capacitor between the control gate and the floating gate is increased without increasing the cell size. Besides, the data can be programmed and erased by a Fowler-Nordheim (FN) tunneling effect.
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