| 摘要 |
PURPOSE: A thin film transistor for a liquid crystal display device and a method for fabricating the same are provided to secure a sufficient storage capacity corresponding to the increase in data potential and prevent an active layer from being removed with an insulating layer while forming contact holes by forming an auxiliary active layer on the active layer pattern. CONSTITUTION: A thin film transistor for a liquid crystal display device includes a polysilicon layer pattern(102) heavily doped with impurities along two adjacent sides of unit pixel areas of transmissive insulating substrate, a first insulating layer formed on the entire surface of the substrate, a black matrix layer(104) formed on the first insulating layer, a second insulating layer formed on the entire surface of the substrate including the black matrix, an active layer(106) formed on active areas of the second insulating layer, a third insulating layer, gate wires partially overlapping the active layer and having gate lines(108) and storage islands(108a) partially overlapping the active layer and separated from gate lines, a fourth insulating layer(109), data wires formed on the fourth insulating layer, a fifth insulating layer(111), and pixel electrodes(112) formed in pixel areas defined by the gate and data lines. The data wires includes data lines(110) intersecting the gate lines, a first conductive island pattern part(110-1) apart from the data lines and electrically connecting the active layer to the polysilicon layer, and a second conductive island pattern part apart from the data lines and the first conductive island pattern part and connecting the black matrix pattern to the storage islands. The pixel electrodes contact the first conductive island pattern part of the data wires.
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