METHOD FOR FABRICATING CAPACITOR FOR SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for fabricating a capacitor for a semiconductor device is provided to prevent oxidation of a lower electrode by crystallizing sequentially amorphous tantalum oxide layers. CONSTITUTION: The first amorphous tantalum oxide layer is formed on an upper portion of a lower electrode(110). The first amorphous tantalum oxide layer is transformed to the first crystalline tantalum oxide layer(120a) by performing a furnace annealing process for the resultant. The second amorphous tantalum oxide layer is formed on the first crystalline tantalum oxide layer(120a). The second amorphous tantalum oxide layer is transformed to the second crystalline tantalum oxide layer(130a) by performing the furnace annealing process for the resultant. An upper electrode is formed on the second crystalline tantalum oxide layer(130a).