| 摘要 |
1,250,377. Semi-conductor devices. SONY CORP. 22 Aug., 1969 [24 Aug., 1968 (2)], No. 41944/69. Heading H1K. A polycrystalline region 103<SP>1</SP> is provided in an integrated circuit semi-conductor wafer 108 in the vicinity of one of the circuit elements, e.g. a transistor Tr, so that when a material producing carrier recombination centres is diffused into the body, e.g. from a vapour deposited layer 110 overlying an oxide layer 105 having an aperture 107 adjacent the polycrystalline region 103<SP>1</SP>, the preferentially very high diffusion rate in polycrystalline material as compared with that in monocrystalline material causes the entire region 103<SP>1</SP> to act as an effective diffusion source, resulting in the production of a region 109 exhibiting low carrier lifetime localized in the vicinity of the transistor Tr. In the embodiment shown the polycrystalline region 103<SP>1</SP> is formed as part of a generally monocrystalline layer 103 vapour deposited on a substrate 101, due to the previous preparation of part 102 of the surface of the substrate 101, e.g. by scratching or deposition of a material having a lattice constant which differs from that of the substrate 101. A polycrystalline layer of Si may also serve as the site for the subsequently deposited polycrystalline region 103<SP>1</SP>. The circuit shown includes, in addition to the transistor Tr, a resistor region 106r. In a further embodiment comprising a transistor and a diode the vicinity of the former device is provided with a concention of carrier recombination centres in a similar manner to that described above by diffusion through an annular polycrystalline region (208), Fig. 2J (not shown), and a further annular polycrystalline region (207) surrounds the transistor and defines the lateral limit of diffusion of the carrier recombination impurity. In a modification of this embodiment the collector electrode may be situated on the first-mentioned annular polycrystalline region (208), which tends to be of low resistivity. Carrier recombination impurities referred to are Au and Cu, for use with Si or Ge wafers. The device containing the localized carrier recombination centre concentration may also be a diode.
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