| 摘要 |
PURPOSE: A method for fabricating a storage capacitor of a liquid crystal display device is provided to thinly form an insulating film of storage capacitor parts for increasing the storage capacity, thereby increasing the aperture rate and luminance of the display device. CONSTITUTION: A method for fabricating a storage capacitor of a liquid crystal display device includes the steps of forming a plurality of gate electrodes(101a,101b) on a substrate defined with TFT parts and storage capacitor parts, forming an active pattern on the TFT parts by forming first and second gate insulating films(102,103) on the gate electrodes, depositing a semiconductor layer(104), and an n+ semiconductor layer(105) on the second gate insulating film, and selectively etching the second gate insulating film, the semiconductor layer and the n+ semiconductor layer, alternatively forming pixel electrodes on the first insulating film on the storage capacitor parts, forming source/drain electrodes(107a) on the active pattern, depositing a protecting film(108) and photoresist on the entire surface, forming contact holes for exposing either the source or drain electrodes on the TFT parts simultaneously with removing the photoresist to alternatively exposing the protecting film on the storage capacitor parts, and alternatively removing the protecting film to expose the first gate insulating film on the storage capacitor parts.
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