发明名称 |
SHIELD RING OF SEMICONDUCTOR ETCH EQUIPMENT |
摘要 |
PURPOSE: A shield ring of semiconductor etch equipment is provided to minimize the amount of particles of the shield ring by preventing an etching of the shield ring due to plasma. CONSTITUTION: A shield ring(130) is installed in the inside of a chamber in order to isolate an upper electrode. The shield ring(130) is formed with quartz. A wall body(34) is formed at an upper side of an outer circumference of a body(32). An opening portion(32) is formed at a center of the body(32). A screw hole is formed on the body(32) or the wall body(34). An etch stop layer(38) is coated on outer surfaces of the body(32) and the wall body(34) and an inner wall of the opening portion(36). The etch stop layer(38) is formed with a sapphire film in order to protect a surface of the shield ring(130).
|
申请公布号 |
KR20030020552(A) |
申请公布日期 |
2003.03.10 |
申请号 |
KR20010053692 |
申请日期 |
2001.09.01 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
BANG, SEONG HWAN;JUN, SANG JUN;SHIN, GYO SIK |
分类号 |
H01L21/3065;(IPC1-7):H01L21/306 |
主分类号 |
H01L21/3065 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|