发明名称 |
VBB/VPP BIAS ARRANGEMENT METHOD OF SEMICONDUCTOR MEMORY |
摘要 |
PURPOSE: A vbb/vpp bias arrangement method of a semiconductor memory is provided, which is capable of securing a stable operation by preventing data loss of a memory cell through sub-bias stabilization of a CSN driving part and a DRAM cell. CONSTITUTION: A semiconductor memory includes a plurality of memory cell arrays consisting of plural memory cells. A bit line sense amp array is shared by adjacent memory cell arrays in one direction. A sub-word line driver array is shared by an adjacent memory cell array to the one direction and has a region overlapped with the bit line sense amp array and crossed vertically. The bit line sense amp array and the sub-word line driver array include VBB and VPP biases arranged in a length direction, respectively.
|
申请公布号 |
KR20030020171(A) |
申请公布日期 |
2003.03.08 |
申请号 |
KR20010053867 |
申请日期 |
2001.09.03 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
KIL, CHA JEONG;YOO, MIN YEONG |
分类号 |
G11C11/407;(IPC1-7):G11C11/407 |
主分类号 |
G11C11/407 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|