发明名称 VBB/VPP BIAS ARRANGEMENT METHOD OF SEMICONDUCTOR MEMORY
摘要 PURPOSE: A vbb/vpp bias arrangement method of a semiconductor memory is provided, which is capable of securing a stable operation by preventing data loss of a memory cell through sub-bias stabilization of a CSN driving part and a DRAM cell. CONSTITUTION: A semiconductor memory includes a plurality of memory cell arrays consisting of plural memory cells. A bit line sense amp array is shared by adjacent memory cell arrays in one direction. A sub-word line driver array is shared by an adjacent memory cell array to the one direction and has a region overlapped with the bit line sense amp array and crossed vertically. The bit line sense amp array and the sub-word line driver array include VBB and VPP biases arranged in a length direction, respectively.
申请公布号 KR20030020171(A) 申请公布日期 2003.03.08
申请号 KR20010053867 申请日期 2001.09.03
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KIL, CHA JEONG;YOO, MIN YEONG
分类号 G11C11/407;(IPC1-7):G11C11/407 主分类号 G11C11/407
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