发明名称 |
METHOD OF FORMING COPPER INTERCONNECT CAPPING LAYERS WITH IMPROVED INTERFACE AND ADHESION |
摘要 |
The integrity of the interface and adhesion between a barrier or capping layer and a Cu or Cu alloy interconnect member is significantly enhanced by delaying and/or slowly ramping up the introduction of silane to deposit a silicon nitride capping layer after treating the exposed planarized surface of the Cu or Cu alloy with an ammonia-containing plasma. Other embodiments include purging the reaction chamber with nitrogen at elevated temperature to remove residual gases prior to introducing the wafer for plasma treatment.
|
申请公布号 |
KR20030020415(A) |
申请公布日期 |
2003.03.08 |
申请号 |
KR20037001226 |
申请日期 |
2003.01.27 |
申请人 |
|
发明人 |
|
分类号 |
H01L21/3205;H01L21/768;H01L21/318;H01L23/52 |
主分类号 |
H01L21/3205 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|