CROSS POINT MEMORY HAVING LOW CROSSTALK AND ELECTRICALLY PROGRAMMABLE RESISTANCE CHARACTERISTICS

摘要

PROBLEM TO BE SOLVED: To provide a cross point memory having a low crosstalk and electric resistance characteristics. SOLUTION: This memory structure comprises (a) a board, (b) lower electrodes provided on the board, (c) upper electrodes provided on the lower electrodes so as to cross the lower electrodes and form cross points at positions where they cross one another, and (d) active layers of perovskite material arranged between the upper electrodes and the lower electrodes at the cross points.