| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for acquiring simulation parameters of a transistor, which can improve the precision of a simulation. SOLUTION: In a conventional method for acquiring parameters, since a model has been served assuming a transistor in which a p-well is extended to a channel and the lower part of a diffusion layer, the repeatability bas limits. Namely, although the diffusion layer has a region in contact with the p-well, the conventional method has no consideration about it at all. Additionally, in a gate implantation, although not only the channel of the transistor, but also a region where the diffusion layer is formed in the periphery of the channel is ion-implanted, the effect of its ion implantation is not considered at all. In this invention, parameters are acquired while considering the junction capacitance characteristics in these regions. Herewith, the repeatability in a simulation of transistor operation speed or the like is improved.
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