| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma-treatment apparatus by which the maintenance of the outer wall of a chamber is made possible without removing a magnetic field generating mechanism. SOLUTION: The plasma-treatment apparatus is for performing a plasma treatment to a semiconductor wafer 30 by generating an electric field with an electric field generating means 10 while forming a magnetic field with a magnetic field generating mechanism 21. The magnetic field generating mechanism 21 comprises the outer wall almost in a cylindrical shape, a magnetic field generating part formed inside the outer wall, a space formed at the magnetic field generating part in accordance with the magnitude of desired magnetic field, a window fitted to the portion corresponding to the space of the outer wall, and a lid detachably fitted to the window part. |
