| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor production facility as a total system where by-product gas, i.e., oxygen rich air, from a cryogenic separation nitrogen production system provided in combination with a facility for making harmless the exhaust gas from a semiconductor production system or a liquid crystal production system using high purity nitrogen gas through a combustion type unharming system can be utilized effectively. SOLUTION: The semiconductor production facility comprises a semiconductor production system 10 using high purity nitrogen gas, a combustion type unharming system 11 for making harmless the exhaust gas from the semiconductor production system 10 by combustion flame using oxygen rich air as combustion assist gas, and a cryogenic separation nitrogen production system 12 for producing oxygen rich air being used in the combustion unharming system 11 plus high purity nitrogen gas being used in the semiconductor production system 10. The semiconductor production facility is further comprises means 16 for regulating the oxygen concentration of oxygen rich air being supplied, as combustion assist gas, from the cryogenic separation nitrogen production system 12 to the combustion type unharming system 11 to a level suitable as the combustion assist gas.</p> |
