| 摘要 |
PROBLEM TO BE SOLVED: To provide a simultaneously baking silicon nitride circuit board which has a high thermal conductivity and excellent heat sink properties, which has a high strength and small occurrence of a fault due to a release of a conductor layer (metallized layer) and which can be formed in a small size and to provide a method for manufacturing the same. SOLUTION: The simultaneously baking silicon nitride circuit board 1a comprises a silicon nitride board 2a, and simultaneously baking metallized layers 3a, 3b integrally formed on at least a front surface of the board 2a and containing at least one type of high melting point metals of W and Mo as main components. The thermal conductivity of the board 2a is 60 W/m.K or more. An areal ratio of a crystal compound phase in a grain boundary phase of the board 2a with respect to an overall grain boundary phase is 20% or more. |
