SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device of high reliability and semiconductor manufacturing equipment. SOLUTION: By etching, a hole is formed which penetrates a second insulating layer 13 and a third insulating layer 14 composed of porous silicon oxide films and turns to a part of a connection hole 21. A second stopper film 20 is used and a second trench 23 is formed in the third insulating layer 13 by etching. Direct nitriding of a silicon oxide film which uses RLSA type plasma treating equipment is applied to side walls of the connection hole 21 and the second trench 23, and a barrier layer 25 composed of an SiN film is formed. A second stopper film 20 also is formed by the direct nitriding similar to the case of the barrier layer 25.