| 摘要 |
PROBLEM TO BE SOLVED: To provide a silicon carbide semiconductor device which is capable of protecting a gate against a heavy current and its manufacturing method. SOLUTION: An N<-> drift layer 2, a first gate layer (P<+> layer) 3, and an N<+> source layer 4 are successively laminated on an SiC board 1, an N<-> channel layer 6 is formed on the inner wall of a trench 5, and a second gate layer 3 (P<+> layer) 7 is formed inside. A trench 20 is provided so as to get to a drift layer 2 through the source layer 4 and the first gate layer 3, a P<+> impurity layer 21 is formed inside the trench 20, electrodes 22a and 22b are arranged inside the impurity layer 21, the electrodes 22a and 22b are grounded, and a surge-absorbing diode D1 is built in one chip. |
