| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device wherein an increase in hygroscopicity and deterioration in adherence of an insulating film are prevented, permitivity of an insulating film between wirings is lowered, and wiring delay is restrained, and a manufacturing method of the device. SOLUTION: The manufacturing method is provided with a process for forming a first insulating film 112 on a first conducting layer 111, a process for forming sacrificial films 124 on the first insulating film by a wiring pattern, a process for forming a second insulating film 113 and, preferably, for forming an FSG film or for forming an insulating film containing voids, a process for eliminating the second insulating film on the sacrificial films, a process for eliminating the sacrificial films and forming a wiring trench, and a process for forming wiring in the trench. As to the second insulating film 113, its permittivity in a part where an interval between adjacent sacrificial films is relatively narrow is low as compared with a relatively wide part.
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