发明名称 METHOD AND SYSTEM FOR FABRICATING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a method and a system in which the influence of particle is reduced by suppressing generation of particles sticking to a semiconductor substrate or suppressing the number of those particles when particles are generation a plurality of processes of a plurality of consecutive steps using the plasma. SOLUTION: In a sequence where processes from a first through a fourth are performed retaining a semiconductor substrate 3 in the chamber 5, the magnitude of the RF power is selected from P1-P4 according to each process treatment and the process treatments from the first to the fourth processes are performed in consecutive steps of 21A-21D.
申请公布号 JP2003068708(A) 申请公布日期 2003.03.07
申请号 JP20020117512 申请日期 2002.04.19
申请人 NEC CORP 发明人 ITO NATSUKO;UESUGI FUMIHIKO;MORIYA TAKESHI
分类号 H01L21/3065;H01L21/302;H01L21/311;H01L21/3213;H01L21/461;(IPC1-7):H01L21/306 主分类号 H01L21/3065
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