发明名称 |
METHOD AND SYSTEM FOR FABRICATING SEMICONDUCTOR DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide a method and a system in which the influence of particle is reduced by suppressing generation of particles sticking to a semiconductor substrate or suppressing the number of those particles when particles are generation a plurality of processes of a plurality of consecutive steps using the plasma. SOLUTION: In a sequence where processes from a first through a fourth are performed retaining a semiconductor substrate 3 in the chamber 5, the magnitude of the RF power is selected from P1-P4 according to each process treatment and the process treatments from the first to the fourth processes are performed in consecutive steps of 21A-21D.
|
申请公布号 |
JP2003068708(A) |
申请公布日期 |
2003.03.07 |
申请号 |
JP20020117512 |
申请日期 |
2002.04.19 |
申请人 |
NEC CORP |
发明人 |
ITO NATSUKO;UESUGI FUMIHIKO;MORIYA TAKESHI |
分类号 |
H01L21/3065;H01L21/302;H01L21/311;H01L21/3213;H01L21/461;(IPC1-7):H01L21/306 |
主分类号 |
H01L21/3065 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|