| 摘要 |
PROBLEM TO BE SOLVED: To provide a new structure for a contact chain, which can recognize the normality and the abnormality of the contact of CS-N at the time of analyzing the defect of FIB. SOLUTION: Contact means are connected in series and they have two end parts. The respective contact means comprise contact holes in dielectric layers and conductive materials in the contact holes, and they are electrically connected to a first dope layer of a second conductive type. A first dope area is formed on a substrate and two probe pads are connected to the two end parts. The contact chain comprises a method for selectively connecting the first dope layer to the substrate. When the substrate is not connected to the first dope layer, total contact resistance can be measured by the measurement of the probe pads.
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