| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem that since a residual polarization retains in a ferroelectric film in a 1-transistor ferroelectric memory cell, even when a reading voltage is applied to a gate, a current value cannot be considerably raised and data-holding characteristics are short. SOLUTION: A nonvolatile semiconductor storage device comprises a ferroelectric gate transistor MC having a first electrode DS, a second electrode S and a control electrode G, and a breaking transistor MS having a first electrode D, a second electrode S and a control electrode G in such a manner that the first electrode D of the gate transistor MC is connected to the second electrode S of the breaking transistor MS and the control terminal G of the transistor MC and the control terminal G of the transistor MS are commonly coupled.
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