| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device wherein a low permitivity insulating film can be used as an interlayer insulating film of multilayer wiring structure, and a manufacturing method of the device. SOLUTION: The semiconductor device having a plurality of wiring layers is provided with a first insulating film formed in a laminar type, a first wiring layer including a plurality of wirings formed on the first insulating film, a second wiring layer including a plurality of wirings formed on an upper surface of the first wiring layer or above it, and a second insulating film which is arranged on upper surfaces of the first insulating film and the first wiring layer which are formed as a plane, and formed between adjacent wirings in the second wiring layer and between the wiring lower side of the second wiring layer and the first insulating film and the first wiring layer. At least a part of the second insulating film between the wiring of the first wiring layer and the wiring of the second wiring layer has relative permitivity lower than that of the first insulating film.
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