| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor storage device capable of rapidly and accurately specifying a fault address position of a physical memory cell from fault address information and a method for manufacturing the same, and to provide an optical recognition pattern and a method for using the same. SOLUTION: Repeating patterns 11 of the memory cell indicated by broken lines are laid out on a semiconductor substrate 10. A wiring layer, not shown and regarding the memory cell, is formed in a multilayer via an interlayer insulating film, and a protective film (passivation film) 12 is formed thereon. An optically recognizable film pattern PTN showing a position corresponding to the pattern on the one memory cell is formed under the protective film.
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