| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing semiconductor device which can reduce an isolation width on the occasion of electrically isolating in distance between wells and between well and source or drain and thereby can reduce the size not only in the lateral direction but also in the depth direction. SOLUTION: The method of manufacturing semiconductor device comprising steps of (a) forming wells with ion implantation in a semiconductor substrate, (b) forming an insulation film on the semiconductor substrate where the wells are formed, (c) selectively removing the insulation film in the region other than that where the element isolation is formed and leaving the insulation film for element isolation to the region where the element isolation is formed, and (d) selectively forming a single crystal semiconductor film having the thickness corresponding to the stepped portion between the element isolation and upper surface of the semiconductor substrate to the region where the insulation film has been selectively removed.
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