| 摘要 |
PROBLEM TO BE SOLVED: To expand the range of P-type diffusion condition in a P<+> -type embedded diffusion layer. SOLUTION: An N<+> -type impurity is embedded to form an N<+> -type embedded diffusion layer 11 on a P-type substrate 10 via an oxide film 30 formed in a predetermined thickness. In this case, the thickness of the oxide film 30 is controlled depending on the concentration of N<+> -type impurity to be embedded. Accordingly, the concentration of the N<+> -type impurity in the N<+> -type embedded diffusion layer 11 can be freely controlled. Therefore, the sufficient range of the P-type diffusion condition can be obtained freely in the P<+> -type embedded diffusion layer formed on the N<+> -type embedded diffusion layer 11.
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