| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having highly reliable and stable performance by preventing the coagulation of a silicide layer and generation of voids in a wiring contact part and to provide the semiconductor device, with which the electrical characteristics are improved by lowering the contact resistance of a wiring layer. SOLUTION: This device is provided with a semiconductor layer containing a silicon, a layer insulating film having an opening formed on the semiconductor layer and the wiring layer formed on the layer insulating film, and a cobalt silicide layer containing tungsten is formed on the interface of the semiconductor layer and the wiring layer in the opening.
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