摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor device which can sufficiently keep moisture from coming inside the product, and its manufacturing method. SOLUTION: The manufacturing method includes a process in which fuses 13 are formed on an interlayer insulating film 14, a process in which a silicon oxide film 16 is formed on the fuses 13 and the interlayer insulating film 14, a process in which probe checking is made, a process in which the fuses 13 are cut as required by the check, and a process in which a passivation film 17 is formed on all the surface including the silicon oxide film 16. Thus, moisture can be firmly kept from the inside of the product.</p> |