发明名称 SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD
摘要 <p>PROBLEM TO BE SOLVED: To provide a semiconductor device which can sufficiently keep moisture from coming inside the product, and its manufacturing method. SOLUTION: The manufacturing method includes a process in which fuses 13 are formed on an interlayer insulating film 14, a process in which a silicon oxide film 16 is formed on the fuses 13 and the interlayer insulating film 14, a process in which probe checking is made, a process in which the fuses 13 are cut as required by the check, and a process in which a passivation film 17 is formed on all the surface including the silicon oxide film 16. Thus, moisture can be firmly kept from the inside of the product.</p>
申请公布号 JP2003068737(A) 申请公布日期 2003.03.07
申请号 JP20010255994 申请日期 2001.08.27
申请人 SEIKO EPSON CORP 发明人 SATO HISAKATSU;SATO HIROO;YOKOYAMA KENJI;WATANABE YURIKO;MIURA MASASHI
分类号 H01L23/52;H01L21/3205;H01L21/768;H01L21/82;H01L21/822;H01L27/04;(IPC1-7):H01L21/320 主分类号 H01L23/52
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