| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a method for electron beam exposure, etc., by which IT equipment can be made to operate at a higher speed, and to perform higher- degree processing and which is a basic technology for manufacturing semiconductor devices. SOLUTION: The ratio of the current, reaching a sensitive substrate to the current (100% current) passing or transmitting through a reticle, is adjusted to <=50%, when one layer is entirely exposed by properly using the forward and reverse rotations of the opening or low- and high-scattering sections of the reticle and positive and negative resists. As a specific method of adjusting the quantity of the current reaching the substrate to <=50%, the ratio of the opening or low-scattering section of the reticle (pattern density = ratio of the opening or low-scatting section = 100×area of opening or low-scattering section/(area of opening or low-scattering section + area of high-scattering section)) can be adjusted to <=50% for one entire layer.</p> |
