MEMOIRE MOLECULAIRE ET SON PROCEDE DE FABRICATION

摘要

The invention concerns a molecular memory consisting of a substrate (4), preferably made of silicon, an assembly of capacitors, each capacitor comprising two conductive layers (9, 10) forming the armatures of said capacitors and between which is arranged a dielectric material (1), and connecting means for providing electrical contacts with the external circuits. The invention is characterised in that said dielectric material (1) consists at least partly of a polymer containing triazole derivatives, a seat material of the spin transition phenomenon or of a spin transition molecular complex. The invention concerns a method for making such a molecular memory