| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor power module whose internal wiring structure is made proper so as to reduce wiring inductance more than a usual PN parallel wiring method. SOLUTION: An integral outer case with built-in input-output main circuit terminals arranged on its periphery and a power circuit mounted on a metal base are combined into a semiconductor device where the power circuit and the main circuit terminal are connected to each other through internal wiring. The power circuit is composed of power semiconductor elements corresponding to phases and mounted on a circuit board. The other wiring lines (P wiring line 8, W-phase wiring line 10) are pinched (wiring pinching parts 9a, 9b) by eitherone wiring line (N wiring 9) of P and N from both sides on a wiring pattern formed on the circuit board, a main circuit terminal of frame structure confronting the wiring pattern, and a wiring route via bonding wires which connect the wiring patterns and the terminals, by which electromagnetic coupling between the wiring patterns is enhanced so as to reduce wiring inductance and noises. |
