| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a high-resistivity CZ silicon wafer which can prevent deterioration of resistivity due to development of a oxyfen donor and has a high gettering-effect, the high-resistivity CZ silicon wafer manufactured by its method, a SOI wafer used with the high-resistivity CZ wafer as a base wafer. SOLUTION: The silicon wafer manufacturing method is characterized in that a silicon single-crystal bar, whose resistivity is 100Ω.cm or more and initial inter-lattice-oxygen concentration is 5 to 10 ppma, is grown by a Chokralski method, the single-crystal silicon bar is worked as a wafer, and the wafer is treated by quick heating and quick cooling.
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