| 摘要 |
PROBLEM TO BE SOLVED: To provide arrangement of a semiconductor memory provided with a self-refresh mode in which only a part of memory region is to be refreshed, while a part of memory region which is to be refreshed can be specified with high degree of freedom. SOLUTION: A self-refresh entry cycle for shifting to a self-refresh mode is performed corresponding to the prescribed combination of command control signals (/RAS, /CAS, /WE, CLK) in activation timing of a clock signal (CLK). A part of a memory region to be subjected to refresh-operation is selected in accordance with one part of address bits (Am-An).
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