发明名称 HEAT TREATMENT APPARATUS AND PRODUCTION METHOD FOR SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a heat treatment, with which the temperature can be elevated/lowered at high speed, while uniformly heating a workpiece to be treated such as a semiconductor wafer in a furnace, when high-frequency induction heating is applied thereto, and to provide a production method for semiconductor device to use such a device. SOLUTION: In the heat treatment apparatus to use a high-frequency induction heating system as a heating source for the workpiece, a dummy object to be treated, with which induction heating is more easily applied than the workpiece to be treated, is used as an auxiliary heat source for directly heating the workpiece and uniformity of heat treatment temperature is secured.
申请公布号 JP2003068658(A) 申请公布日期 2003.03.07
申请号 JP20010258276 申请日期 2001.08.28
申请人 SONY CORP;TOYOKO KAGAKU CO LTD;DAIICHI KIDEN:KK 发明人 INAKANAKA HIROSHI;OKUHARA ASAYUKI;DOBASHI AKIRA;MATSUSHITA TAKESHI
分类号 H01L21/22;H01L21/205;(IPC1-7):H01L21/205 主分类号 H01L21/22
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